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Bridgestone develops five inch diameter SiC Wafer

Aug, 26 2011

Bridgestone Corporation announced today that it has successfully developed a five inch diameter silicon carbide (SiC) wafer for use in the next generation of power semiconductors.

SiC wafers are more durable and more resistant to high temperatures than the silicon wafers traditionally used as substrates for semiconductors. In the future, it is anticipated that these wafers will be commonly used in fields such as the automobile and energy industries.

Bridgestone’s SiC wafers are characterized by unique high-purity SiC powder, as well as an integrated, clean manufacturing process that encompasses every step of production up to the completion of the finished product. Through the use of new simulation and temperature control technologies, Bridgestone was successful in developing these five-inch diameter SiC wafers, which are not only larger in size, but also higher in quality.

The superior quality of the new five-inch diameter SiC wafers meets the high standards required for large-scale production wafers, and Bridgestone sees these wafers as a powerful tool for use in the next-generation of power semiconductors.

Bridgestone is presently working on the development of six inch SiC wafers, which are currently in high demand, and plans to bring them to market during the latter half of 2012.

Bridgestone’s newly developed five-inch diameter SiC wafers will be on display at the International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011) held in the United States beginning September 11, 2011.